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Consider a pn junction. It is given that the concentration of acceptors on the p-side of...

Consider a pn junction. It is given that the concentration of acceptors on the p-side of that junction is equal to the concentration of donors on the n-side. Find these concentrations in terms of the intrinsic carrier concentration in the material of the junction, temperature, and built-in voltage.

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Given Pn Junction diode NO=NA we know in P type material ni = NAME INA = hi NP in N-type material We know ni2= NOPO AND = nih P We know buid in voltage Vo = VT ln (NAND) = vt in het ong (UTC by Where Ivo = vt ln (m) Thank you

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