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1. n- and p-type Si samples are doped with the same concentration levels of ND =...

1. n- and p-type Si samples are doped with the same concentration levels of ND = NA = 10^17 cm^-3 of their respective dopants.Compute the charge carrier concentrations in units cm^-3 and specic conductivity in siemens/cm for each of the two materials.

2. Characterize the p-n junction created from the materials of the above problem by computing the built-in voltage Vbi (in V) and depletion zone width (in nm).

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