Question

Design an ideal abrupt silicon PN-junction at 300 K such that
the donor impurity concentration N_{d} (in

cm^{?3}) in n-side is N_{d} =
5×10^{15}/cm^{3} and the acceptor impurity
concentration N_{a} in the p-side is N_{a} = 715
×10^{15}/cm^{3}.

Given: the diode area A = 2×10^{?3} cm^{2},
n_{i} = 10^{10}/cm^{3}, ?_{n} =
10^{?8} s and ?_{p} = 10^{?7} s

Determine the following when a forward bias of 0.6 V is applied
to the diode:

1. What are the values (in ?m) of the depletion width at the p-side
of the junction x_{p0} and the depletion

width at the n-side x_{n0}.

2. Minority carrier hole diffusion current I_{p}
(X_{n}) at the space charge edge.

3. Minority carrier electron diffusion current
I_{n}
(-X_{p}) at the
space charge edge.

4. The total diode current I.

5. Roughly, sketch the carrier distribution across the junction.

6. The reverse saturation current I_{0}.

7. The junction capacitance C_{j}.

Answer #1

An abrupt silicon p-n junction has NA = 1.6 x 1014 cm-3 on one
side and ND = 5.5 x 1015 cm-3 on the other. At a
temperature of 300K
a) (4) Find the position of the Fermi levels in both the p and
n regions
b) (4) Find the majority concentrations in each region
c) (8) Find the minority concentrations in each region (two
ways)
d) (4) Draw and label the equilibrium band diagram
e) (4) Determine the size...

1. n- and p-type Si samples are doped with the same
concentration levels of ND = NA = 10^17 cm^-3 of their respective
dopants.Compute the charge carrier concentrations in units cm^-3
and specic conductivity in siemens/cm for each of the two
materials.
2. Characterize the p-n junction created from the materials of
the above problem by computing the built-in voltage Vbi (in V) and
depletion zone width (in nm).

Consider a silicon diode at T=300 K with Nd = 4 × 1016 cm?3 , Na
= 1 × 1015 cm?3 , Dn = 25 cm2/s, Dp = 10 cm2/s, ?n = 5 × 10?7 s, ?p
= 10?7 s, A = 10?3 cm2 , ni = 1.5 × 1010 cm?3 , r = 11.7. (1)
Determine diffusion capacitance and junction capacitance at (a) Va
= 0.4 V; (b) Va = 0.6 V. (2) At what voltage the two capacitances...

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