Question

Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration N_d (in
cm^?3) in n-side is N_d = 5×10¹⁵/cm³ and the acceptor impurity concentration N_a in the p-side is N_a = 715 ×10¹⁵/cm³.
Given: the diode area A = 2×10^?3 cm², n_i = 10¹⁰/cm³, ?_n = 10^?8 s and ?_p = 10^?7 s

Determine the following when a forward bias of 0.6 V is applied to the diode:
1. What are the values (in ?m) of the depletion width at the p-side of the junction x_p0 and the depletion
width at the n-side x_n0.

2. Minority carrier hole diffusion current I_p (X_n) at the space charge edge.

3. Minority carrier electron diffusion current I_n (-X_p) at the space charge edge.

4. The total diode current I.

5. Roughly, sketch the carrier distribution across the junction.

6. The reverse saturation current I₀.

7. The junction capacitance C_j.

Answer 1