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A silicon step junction is doped such that Ef=Ev-2kT on the p-side and Ef=Ec-Eg/4 on the...

A silicon step junction is doped such that Ef=Ev-2kT on the p-side and Ef=Ec-Eg/4 on the n-side. (a) Draw the equilibrium energy band diagram (b) Determine the built-in voltage (Vbi) at room temperature

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Answer #1

Always remember that Ef is constant line at equilibrium. First draw Ef ,then go for remaining.

We know that barrier height is nothing but built in potential Vbi . So make use of that . I used that in part b .

If you like my explanation , please upvote. Thank you.

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