Question

An abrupt silicon p-n junction has NA = 1.6 x 1014 cm-3 on one
side and ND = 5.5 x 1015 cm-3 on the other. At a

temperature of 300K

a) (4) Find the position of the Fermi levels in both the p and
n regions

b) (4) Find the majority concentrations in each region

c) (8) Find the minority concentrations in each region (two
ways)

d) (4) Draw and label the equilibrium band diagram

e) (4) Determine the size of the potential “hill”

Answer #1

Design an ideal abrupt silicon PN-junction at 300 K such that
the donor impurity concentration Nd (in
cm?3) in n-side is Nd =
5×1015/cm3 and the acceptor impurity
concentration Na in the p-side is Na = 715
×1015/cm3.
Given: the diode area A = 2×10?3 cm2,
ni = 1010/cm3, ?n =
10?8 s and ?p = 10?7 s
Determine the following when a forward bias of 0.6 V is applied
to the diode:
1. What are the values (in ?m)...

A junction employs ND = 5 x 10x10^17 cm-3 and NA = 4 x 10x10^16
cm-3.
(a) Determine the majority and minority carrier concentrations
on both sides.
(b) Calculate the built-in potential at T=250 K, 300 K, and 350
K. Explain the trend
Please show steps.

The p-type region of a silicon p-n junction is doped with 1016
boron atoms per cubic centimeter, and the n-type region is doped
with 1018 phosphorus atoms per cubic centimeter. Assume a step p-n
junction and that all doping atoms are ionized. The intrinsic
carrier concentration in silicon at 300K is 1.5∗1010cm−3 . What are
the electron and hole concentrations (in cm−3 ) in the p-type and
n-type regions at thermal equilibrium? Hole concentration in p-type
region (in 1016cm−3 )...

Consider a silicon crystal that has been doped with 4 x 1016
cm-3 boron atoms and 9 x 1015 cm-3 phosphorous atoms. (a) What is
the overall charge of the silicon? (b) Is the material n-type or
p-type? Explain. (c) What are the equilibrium electron and hole
concentrations at room temperature (300K)? (d) What is the ionized
donor density in the crystal? (e) What is the neutral donor density
in the crystal? (f) Now assume the sample is heated to...

10. Sketch a silicon p-n junction, showing the depletion region,
band bending, and the Fermi level in the absence of light or
applied potential. In the dark, the p-n junction acts as a
rectifier. (a) Which way do electrons and holes flow most easily in
the dark? (b) Does the built in electric field increase or decrease
under forward bias? (c) In the light, the junction acts as a
photodiode. In this case, under short circuit conditions, do
electrons flow...

Consider a silicon diode at T=300 K with Nd = 4 × 1016 cm?3 , Na
= 1 × 1015 cm?3 , Dn = 25 cm2/s, Dp = 10 cm2/s, ?n = 5 × 10?7 s, ?p
= 10?7 s, A = 10?3 cm2 , ni = 1.5 × 1010 cm?3 , r = 11.7. (1)
Determine diffusion capacitance and junction capacitance at (a) Va
= 0.4 V; (b) Va = 0.6 V. (2) At what voltage the two capacitances...

A Si sample with ND=1x10^17 cm^-3 has a steady state excess hole
concentration maintained at x=0 of 1x10^16 cm^–3. Assume the
electric field is zero, ni=1.5x10^10 cm^–3, μn=800 cm^2 /Vs, μp
=200cm^2 /Vs, τ n = τ p =10μs, T=300K.
A) Plot the hole concentration as a function of distance x into
the material, for x=0 to 3 x Lp
B) What is the quasi-fermi level separation at x=50μm?
C) Calculate and plot the diffusion current density as a
function...

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