Question

A) Explain the difference between the Electron beam lithography and UV lamp mask aligner?

B) Also, how each of them operate? and what are the differences?

Answer 1

(A) Differences between Electron Beam Lithography and UV lamp mask aligner

The Electron beam Lithography is the process of etching patterns or geographical shapes onto a material using an electron beam which varies the solubility of the material and etches the pattern.

The UV mask aligner is a device used in photolithography which is similar to Electron Beam Lithography used to etch the patterns or geographical shapes onto a material.

(B) Electron Beam Lithography

(1) The electron beam lithography uses devices Electron Beam emitter, Lenses and Diverter

(2) The material which is to be etched is coated onto a substrate and baked to form a thin layer which is known as 'Resist'.

(3) After that an Electron beam gun is used to focus electrons onto the resist using lens and Diverter.

(4) The entire pattern is not etched once, but in a sequence.

(5) The exposure part has changes in its solubility, might be soluble or insoluble in developer.

(6) Developer is the solution in which resist is dipped to clear out the unwanted portions

(7) The solubility changes depending on the positive beam or the negative beam.

(8) The resist is dipped in the developer to grave the etching onto the substrate and then removing the unwanted portions and cleaning the resist.

UV mask aligner

(1) This process is similar to Electron Beam Lithography except this process uses a mask to etch the required shape onto a material.

(2) In this process the material onto which the pattern is to be etched is coated onto the oxide of a substrate and baked to form a thin layer which is known as 'Resist'.

(3) Then the Resist is coated with mask on which pattern is engraved.

(4) The arrangement when exposed to UV light the pattern from the mask is transferred onto the material.

(5) Then the solubility of the exposed area is varied when compared to the unexposed area.

(6) Then the entire arrangement is dipped inside developer to remove the unwanted portions and engrave the remaining pattern onto the material.

(7) After that the cleaning is done to remove waste materials using dry or wet treatment.

Summary:

In the Electron Beam Lithography the material is sensitive to the electrons where as in UV mask aligner the material is sensitive to UV light. In the Electron Beam Lithography the pattern etching is done in sequential order where as in UV mask aligner the pattern is etched aa whole. The Electron Beam Lithography doesn't use any mask for the material where as in UV mask aligner a photo resistive mask is coated onto the material. The mask is used to transfer the pattern on it to the material using UV light.