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A Ti-gate p-channel Si-MOSFET with substrate doping ND=1x1016 cm-3. If the oxide thickness is 150 Aº...

A Ti-gate p-channel Si-MOSFET with substrate doping ND=1x1016 cm-3. If the oxide thickness is 150 Aº and the interface charge Qox =1x1011 qC/cm2. the gate length is 1 um, and the gate width is 20 um.

  1. Find Wm, VFB, and VT.
  2. Find the saturation current for VG=-5V.
  3. Find the current at VG= -3V and VD=-0.5V.
  4. Is the device enhancement or depletion mode?
Math   Statistics-And-Probability   
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