Question

Silicon at 293 K has an energy gap Eg = 1.20 eV.

(a) Calculate the probability that an electron state is occupied at the bottom of the
conduction band at a temperature of 293 K, i.e., at an energy 1.20 eV above the top
of the valence band.

(b) Doping silicon with aluminum adds acceptor levels in the gap, 0.067 eV above the top
of the valence band of pure silicon, and changes the effective Fermi energy. See Fig. 41-
11b. At a particular doping density and a temperature of 293 K, the probability is 6.91x10^-6 that an electron state is occupied at an energy 1.20 eV above the top of pure silicon's valence band. Calculate the effective Fermi energy for the doped sample, relative to the top of pure silicon's valence band.

(c) Using information in this problem, which is the better conductor at room temperature:
pure silicon or silicon doped with aluminum? Explain.

Answer 1

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