Question

Assume that the BJT (of P1) operates in the active mode and the applied voltages are: V_EB=0.5V and V_CB=-2V. The Shockley assumptions apply (Uniform doping in the individual doping regions, abrupt junctions, low-level injection, no losses due to generation and recombination in the depletion regions).

a) Schematically sketch the energy band diagram in the active mode. Indicate the quasi Fermi levels and the width of the space charge regions.

b) The voltage V_EB is further increased. As a consequence of the increased emitter-base voltage more carriers are injected so that the assumption of low injection does not apply anymore. Calculate the emitter-base voltage V_EB level which leads to a transition from low to high injection.

Reference P1 link :

https://www.chegg.com/homework-help/questions-and-answers/p1-silicon-p-np-bipolar-junction-transistor-bjt-used-amplifier-doping-concentration-emitte-q28883663

Answer 1