Question

An arsenic (As)-doped silicon (Si) has a conductivity of 2.50 x 10^-2 (Ω∙m)^-1 at 25°C. The electron mobility of Si is 0.140 m²/(V∙s) and the hole mobility of Si is 0.050 m²/(V∙s). The intrinsic conductivity of Si is 3.40 × 10⁻⁴ (Ω∙m)^-1 at 25°C. The extrinsic semiconductor’s predominant charge carrier density is approximately __________ times that of the intrinsic semiconductor's predominant charge carrier density.

Answer 1