Question

Omar Equation 6.21 gives the carrier concentration for an intrinsic semiconductor to be: n=2{[(Kb*T)/(2*pi*hbar^2)]^3/2}*[(Mestar*Mhstar)^3/4]*e^[-Eg/(2Kb*T)]. For GaSb,...

Omar Equation 6.21 gives the carrier concentration for an intrinsic semiconductor to be: n=2{[(Kb*T)/(2*pi*hbar^2)]^3/2}*[(Mestar*Mhstar)^3/4]*e^[-Eg/(2Kb*T)]. For GaSb, the gap energy Eg=0.7 eV, the effective mass of the electron Mestar=0.20M0, and the effective mass of the hole Mhstar=0.39M0, where M0 is the free electron mass. Calculate the carrier concentration for temperatures from 270 to 370K in 10K increments!

Science   Advanced-Physics   
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