Question

An implantation process on a p-type Silicon wafer (Nb=1e16/cm3) covered with 100nm oxide (SiO2) layer uses 90 keV Phosphorus ions to result in a peak concentration of 2·1019 cm-3. The implanted ions are subsequently diffused in air for 2 hours at 1100 °C. Find the depth of the p-well after this diffusion cycle. State any assumptions that you made. (D = 2·10-13 cm2/sec for B @1100°C)

Answer #1

2. b) An n-type silicon wafer undergoes a pre-deposition
diffusion process with a constant surface concentration of boride
gas; the resulting concentration of boron in silicon at the surface
is estimated to be 1x1018 atoms cm-3. The background concentration
of trace boron atoms in the silicon wafer is estimated to be 1x1014
cm-3. Estimate the depth of the p-n junction below the surface when
the background doping concentration of the n-type impurity is 3.45
x1016 cm-3; assume the diffusion process...

(25) A silicon wafer was doped in a 1000°C pre-deposition
diffusion with phosphorus (P) to its solid solubility limit
(maximum doping concentration, at 1000°C, Nsol = 11021/cm3 for P
in Si). The process time was 20 minutes. After the pre-deposition,
the surface of the silicon wafer was sealed in a closed tube and an
1100°C drive-in process followed.
1). Find the surface concentration after pre-deposition.
2). Find the drive in time needed to obtain a junction depth of
4.0 μm....

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