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An implantation process on a p-type Silicon wafer (Nb=1e16/cm3) covered with 100nm oxide (SiO2) layer uses...

An implantation process on a p-type Silicon wafer (Nb=1e16/cm3) covered with 100nm oxide (SiO2) layer uses 90 keV Phosphorus ions to result in a peak concentration of 2·1019 cm-3. The implanted ions are subsequently diffused in air for 2 hours at 1100 °C. Find the depth of the p-well after this diffusion cycle. State any assumptions that you made. (D = 2·10-13 cm2/sec for B @1100°C)

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