Diffusion is used in semiconductor integrated circuits fabrication. One Integrated Circuit design needs for diffusion of Aluminum into Silicon. The total amount of Aluminum (on the Silicon surface) that was introduced during the predeposition treatment is 5g/cm2 . At a drive-in treatment, calculate the Al concentration at depth of 2.5 micrometers below the surface of Si. The drive-in diffusion is carried out at 1000C for 5 hours. Qd is 3.41 eV/atom and D0 is 2.45x10-4m2/s.
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