Question

1) For an abrupt p-n junction in thermal equilibrium: a) Plot a graph showing the variation of the contact potential as a function of doping. b) Plot a graph showing the variation of the contact potential as a function of temperature. c)Plot a graph showing the variation of the electric potential as a function of doping. d)Plot of a graph showing the variation of the electric field as a function of doping.

Answer #1

**temperature**, greater will be the
mobility of charge carriers and lower **potential**
difference across the junction can break the
**potential** barrier. But as the
**temperature** lowers, kinetic energy of charge
carriers decreases and higher will be the value of
**potential** barrier.

An abrupt silicon p-n junction has NA = 1.6 x 1014 cm-3 on one
side and ND = 5.5 x 1015 cm-3 on the other. At a
temperature of 300K
a) (4) Find the position of the Fermi levels in both the p and
n regions
b) (4) Find the majority concentrations in each region
c) (8) Find the minority concentrations in each region (two
ways)
d) (4) Draw and label the equilibrium band diagram
e) (4) Determine the size...

Suppose that a p-n junction at equilibrium is short circuted
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10. Sketch a silicon p-n junction, showing the depletion region,
band bending, and the Fermi level in the absence of light or
applied potential. In the dark, the p-n junction acts as a
rectifier. (a) Which way do electrons and holes flow most easily in
the dark? (b) Does the built in electric field increase or decrease
under forward bias? (c) In the light, the junction acts as a
photodiode. In this case, under short circuit conditions, do
electrons flow...

The p-type region of a silicon p-n junction is doped with 1016
boron atoms per cubic centimeter, and the n-type region is doped
with 1018 phosphorus atoms per cubic centimeter. Assume a step p-n
junction and that all doping atoms are ionized. The intrinsic
carrier concentration in silicon at 300K is 1.5∗1010cm−3 . What are
the electron and hole concentrations (in cm−3 ) in the p-type and
n-type regions at thermal equilibrium? Hole concentration in p-type
region (in 1016cm−3 )...

(4) Which of the following cannot form a near-ohmic contact?
( )
(A) p-n junction
(B) n-n+ junction
(C) p-p+ junction
(D) Semiconductor-metal junction

2. Schottky junction:
a. Consider a Schottky junction diode between Au and n-Si doped
with 10^16 donors per cubic centimeter. Given the work function of
Au at 5.1 eV and the electron affinity of Si is 4.05 eV. What is
the theoretical barrier height for electrons from the metal to the
semiconductor, and what is the built-in voltage?
b. Draw the equilibrium band diagram of a Al/p-Si Schottky
contact. Given the work function of Al at 5.3 eV, what is...

(a) Plot the potential of a uniformly charged 1-m rod with 1 C/m
charge as a function of the perpendicular distance from the center.
Draw your graph from s=0.1m to s=1.0m (b) On the same graph, plot
the potential of a point charge with a 1-C charge at the origin.
(c) Which potential is stronger near the rod? (d) What happens to
the difference as the distance increases? Interpret your
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Using the calculated wavelength, plot a graph of
1/lambda vs. (1/2^2 - 1/N^2). Determine the Rydberg constant from
the slope of the line. Please demonstrate using Excel how to plot
the graph portion and demonstrate clearly on paper how to determine
the Rydberg constant from the slope of the line (showing all steps
in detail)
Computed wavelengths for each spectral line;
Yellow = 5.89x10^-7m
Violet = 4.38x10^-7m
Blue = 4.91x10^-7m
Red = 6.78x10^-7m

In a graph showing the temperature optimum for a particular
reaction, the slope is negative at the temperatures above the
optimum because at that point,
A. the molecules participating in the reaction expended their
energy in the earlier part of the graph.
B. the equilibrium constant for the reaction shifted to a value
closer to zero.
C. the test tube in which the experiment was performed melted,
and the reactants leaked out.
D. most of the reactants have been converted...

1. Suppose a system composed of two subsystems that we call S1
and S2 in thermal contact.
Assume further that the wall separating the two subsystems is
movable and impenetrable at particles.
(a) Define the macrostate of the system.
(b) Through statistical considerations find the equilibrium
condition for such a system.
(c) Determine the physical significance of the thermodynamic
equilibrium parameters.
(d) If the exchange is such that the three macroscopic
parameters (E, V, N) are variable, find the new...

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