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For silicon at T=300K, Intrinsic carrier concentration (??) = 1.45 × 10^10 ??−3 Silicon bandgap (??...

For silicon at T=300K, Intrinsic carrier concentration (??) = 1.45 × 10^10 ??−3 Silicon bandgap (?? = 1.12 ??) The silicon is doped at room temperature (300K) with Arsenic atoms (penta-valent), so that donor concentration is (??) =6× 10^16 cm-3 . Find the equilibrium concentration of electrons, holes and shift of the chemical potential (Fermi level) with respect to intrinsic chemical potential due to doping.

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