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The electron concentration in a semiconductor is given by n = 1016((1-2x)/L) cm-3 for 0 ≤...

The electron concentration in a semiconductor is given by n = 1016((1-2x)/L) cm-3 for 0 ≤ x ≤ L, where L = 15 μm. The electron mobility and diffusion coefficient are μn = 1200cm2/V-s and Dn = 30.9cm2/s. An electric field is applied such that the total electron current density is a constant over the given range of x and is Jn = -50 A/cm2 . (a) Determine the electron diffusion current density (b) Determine the required electric field versus a b c d Ec Ei Ev Ef distance function. (Hint: The total current density is dependent upon both drift and diffusion) (c) Plot the diffusion current density, the electron concentration (n), the drift current density and the electric field as a function of distance (x).

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