Question

The electron concentration in a semiconductor is given by n = 1016((1-2x)/L) cm-3 for 0 ≤...

The electron concentration in a semiconductor is given by n = 1016((1-2x)/L) cm-3 for 0 ≤ x ≤ L, where L = 15 μm. The electron mobility and diffusion coefficient are μn = 1200cm2/V-s and Dn = 30.9cm2/s. An electric field is applied such that the total electron current density is a constant over the given range of x and is Jn = -50 A/cm2 . (a) Determine the electron diffusion current density (b) Determine the required electric field versus a b c d Ec Ei Ev Ef distance function. (Hint: The total current density is dependent upon both drift and diffusion) (c) Plot the diffusion current density, the electron concentration (n), the drift current density and the electric field as a function of distance (x).

Homework Answers

Know the answer?
Your Answer:

Post as a guest

Your Name:

What's your source?

Earn Coins

Coins can be redeemed for fabulous gifts.

Not the answer you're looking for?
Ask your own homework help question
Similar Questions
.         Consider a silicon sample at 300 K. Assume that the electron concentration varies linearly with...
.         Consider a silicon sample at 300 K. Assume that the electron concentration varies linearly with distance. At x=0, the electron concentration is n(0). At x=10 µm, the electron concentration is n(10µm)= 5x1014/cm3. If the electron diffusion coefficient, assumed constant, is Dn =30 cm2/sec, determine the electron concentration at x=0 for the following two diffusion current densities: (a) the diffusion current density is found to be Jndiff = + 0.9 A/cm2 and (b) Jndiff = - 0.9 A/cm2.
A Si sample with ND=1x10^17 cm^-3 has a steady state excess hole concentration maintained at x=0...
A Si sample with ND=1x10^17 cm^-3 has a steady state excess hole concentration maintained at x=0 of 1x10^16 cm^–3. Assume the electric field is zero, ni=1.5x10^10 cm^–3, μn=800 cm^2 /Vs, μp =200cm^2 /Vs, τ n = τ p =10μs, T=300K. A) Plot the hole concentration as a function of distance x into the material, for x=0 to 3 x Lp B) What is the quasi-fermi level separation at x=50μm? C) Calculate and plot the diffusion current density as a function...
The electron concentration gradient of some material is dn/dx=1017cm-4, and the Constant Table: e0 =8.85´10-12C2×N--1×m-2 ;...
The electron concentration gradient of some material is dn/dx=1017cm-4, and the Constant Table: e0 =8.85´10-12C2×N--1×m-2 ; R=8.315J-mol-1×K-1; m0= 4π´10-7N×A-2; h = 6.63´10-34J×s; e = 1.602´10-19C; G=6.67´10-11N×m2-kg-2; me=9.11´10-31kg; g=9.8 m/s2; mobility of the electron is 1350 cm2/V.s,calculate: (a) the diffusion coefficient of the electron, assuming kT=0.0259ev at T = 300 K. (b) the diffusion current density of electrons.
If V = 2 V, L = 2 cm, W = 1 cm, H = 0.3...
If V = 2 V, L = 2 cm, W = 1 cm, H = 0.3 cm, and material conductivity σ=5 S/m, a. Calculate the electric field in the resistor (assume uniform throughout). b. Calculate the force on a single electron. c. Calculate the material resistivity (conductivity is given). Report your answer in Ω-cm. d. Using your answer from (a), and knowing J=σE, calculate the current density flowing in the resistor. e. Calculate the resistance of the resistor. f. Using...
#2 At one instantaneous moment, the electron concentration in n-type silicon at 300 K varies linearly...
#2 At one instantaneous moment, the electron concentration in n-type silicon at 300 K varies linearly from 1e17 cm-3 at x = 0 to 6e16 cm-3 at x = 2 µm. Calculate the electron current density in the silicon sample at that moment. Assume µn= 1000 cm2/V/s. #3 Explain why the assumed mobility in question #2, above, is valid and reasonable.  NOTE: I just need to know the 2nd part of the question that why 'mu' = 1000 is valid and...
ADVERTISEMENT
Need Online Homework Help?

Get Answers For Free
Most questions answered within 1 hours.

Ask a Question
ADVERTISEMENT