A silicon solar cell has area 50 cm2, reverse-saturation current 0.75 μA, β = 2. The electrical power generated in the 0.4Ω load resistor is 894 mW. Determine (a) The circuit current i, (b) the photocurrent iλ, (c) the optical power incident on the cell, assuming that 80% is absorbed, and (d) the optical-to-electrical conversion efficiency of the cell. Assume the temperature remains near 300 K. Assume λ = 500 nm for the incident light.
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