Question

5. (a) Calculate the conductivity of intrinsic Si at room temperature. (b) Calculate the conductivity of...

5. (a) Calculate the conductivity of intrinsic Si at room temperature. (b) Calculate the conductivity of Si doped at Nd=1017/cm3. (c) Calculate the conductivity of Si doped at Na=1017/cm3. (d) Why are the results different and does this result suggest electron or hole dope Si may be preferred for some devices? (e) Calculate the position of the Fermi energy of the three cases described in (a) –(c).

Homework Answers

Know the answer?
Your Answer:

Post as a guest

Your Name:

What's your source?

Earn Coins

Coins can be redeemed for fabulous gifts.

Not the answer you're looking for?
Ask your own homework help question
Similar Questions
An n-type silicon (Si) is produced by doping with phosphorus (P). The electrical conductivity measurement of...
An n-type silicon (Si) is produced by doping with phosphorus (P). The electrical conductivity measurement of the doped Si shows the charge-carrier concentration to be 3.091 x 1017 cm-3 at room temperature. Calculate the doping level of P and express your answer in units of gram of P per kilogram of Si. I saw some explanation for this question answered on here but I still don't understand it. Thanks!
Problem #2: A piece of Si doped ND=1x1017 cm -3 has a uniform excess electron and...
Problem #2: A piece of Si doped ND=1x1017 cm -3 has a uniform excess electron and hole concentrations of 1x1016cm -3 excited and maintained in the material. A) Calculate the equilibrium electron and hole concentrations and the position of EF. B) Calculate the total electron and hole concentrations, the positions of FN and FP, as well as the quasi Fermi level separation (FN-FP) C) Draw a band diagram including EC, EV, Ei, EF, FN, and FP.
An arsenic (As)-doped silicon (Si) has a conductivity of 2.50 x 10-2 (Ω∙m)-1 at 25°C. The...
An arsenic (As)-doped silicon (Si) has a conductivity of 2.50 x 10-2 (Ω∙m)-1 at 25°C. The electron mobility of Si is 0.140 m2/(V∙s) and the hole mobility of Si is 0.050 m2/(V∙s). The intrinsic conductivity of Si is 3.40 × 10−4 (Ω∙m)-1 at 25°C. The extrinsic semiconductor’s predominant charge carrier density is approximately __________ times that of the intrinsic semiconductor's predominant charge carrier density.
1. Compute the resistivity of an intrinsic semiconductor at 300 K, in units of Ω-m, given...
1. Compute the resistivity of an intrinsic semiconductor at 300 K, in units of Ω-m, given that it has an intrinsic carrier concentration of 4.9 x1022m-3 and electron and hole mobilities of 0.53 and 0.09 m2/V-s, respectively. 2. The intrinsic concentration of electrons and holes (i.e. concentration of e-h pairs) in Si at room temperature is approximately 1x1010 cm-3. Given the density and atomic mass of Si to be 2.33 g/cm3 and 28.06 g/mol, determine the ratio of ionized to...
As starting material we have 99.999999 at.% Si (= 8 nines or 8N). The only dopant...
As starting material we have 99.999999 at.% Si (= 8 nines or 8N). The only dopant is aluminium and we call this 8N-Si(Al) (see periodic table). At room temperature the electron mobility in Si is µe=0.25 m2/(Vs), the hole mobility µh=0.05 m2/(Vs), unit of charge 1.6 10-19 C, the density of Si ρ=2.33 g/cm3, the atomic mass of Si 28.08 and Avogadro’s number 6.022 1023. a. What is the electrical conductivity of this material at room temperature (where conduction can...
Calculate the threshold voltage of non-ideal Si MOS capacitor with ND=4x10^16/cm3 , d=6 nm and Qf/q=5...
Calculate the threshold voltage of non-ideal Si MOS capacitor with ND=4x10^16/cm3 , d=6 nm and Qf/q=5 x 10^11/cm-2 . Neglect Qit, Qot and Qm. Gate material is p+ polysilicon with Fermi level coincident with the valence band edge. Electron affinity for silicon is 4.05 eV. Show the band diagram for Φms calculation. Neglect band bending at the SiO2/Si interface for Φms calculation.
Silicon at 293 K has an energy gap Eg = 1.20 eV. (a) Calculate the probability...
Silicon at 293 K has an energy gap Eg = 1.20 eV. (a) Calculate the probability that an electron state is occupied at the bottom of the conduction band at a temperature of 293 K, i.e., at an energy 1.20 eV above the top of the valence band. (b) Doping silicon with aluminum adds acceptor levels in the gap, 0.067 eV above the top of the valence band of pure silicon, and changes the effective Fermi energy. See Fig. 41-...
Q: (i) Neutron wavelength: Calculate the wavelength of thermal neutrons at (a) room temperature and (b)...
Q: (i) Neutron wavelength: Calculate the wavelength of thermal neutrons at (a) room temperature and (b) cooled to 4 K (liquid He temperature). How do these compare with 400 keV electrons and to typical Brehmmstrahlung radiation from an x-ray tube (ii) Thermal velocities, de Broglie wavelength: A thermal neutron has a kinetic energy of 3/2 kT, where T is room temperature, 300 K. i.e. these neutrons are in thermal equilibrium with their surroundings. (a) Calculate the thermal velocity of such...
QUESTION 1 ? What is the relationship between family dysfunction and schizophrenia? a. ?Research has substantiated...
QUESTION 1 ? What is the relationship between family dysfunction and schizophrenia? a. ?Research has substantiated a link between family dysfunction and schizophrenia but can't say which causes the other. b. ?Family dysfunction is a major causative factor for schizophrenia. c. ?Research has failed to substantiate a direct causal link between family dysfunction and schizophrenia. d. ?Family dysfunction plays a minor role in developing schizophrenia. 1.00000 points    QUESTION 2 ? Chuck has no life plan; he simply lives from...
What tools could AA leaders have used to increase their awareness of internal and external issues?...
What tools could AA leaders have used to increase their awareness of internal and external issues? ???ALASKA AIRLINES: NAVIGATING CHANGE In the autumn of 2007, Alaska Airlines executives adjourned at the end of a long and stressful day in the midst of a multi-day strategic planning session. Most headed outside to relax, unwind and enjoy a bonfire on the shore of Semiahmoo Spit, outside the meeting venue in Blaine, a seaport town in northwest Washington state. Meanwhile, several members of...