GaP is a semiconductor useful in the electronics industry. It has an indirect bandgap of 2.24 eV at room temperature. GaP crystallizes in the sphalerite structure (also known as the zinc-blende structure). Using the Born-Mayer equation, determine which ionic radii should be used and estimate the lattice enthalpy of GaP.
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Ionic radii: Ga(76 pm) and P(58 pm)
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