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Pure, intrinsic silicon has a cubic lattice parameter of 0.53 nm and a bandgap of 1.1...

Pure, intrinsic silicon has a cubic lattice parameter of 0.53 nm and a bandgap of 1.1 eV. If the silicon is doped by 2 ppb (parts per billion) of phosphorus atoms, and the resulting n-type silicon is well into the exhaustion or extrinsic region where the concentration is almost flat with further increases in temperature, what is the total carrier concentration?

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