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(25) A silicon wafer was doped in a 1000°C pre-deposition diffusion with phosphorus (P) to its...

  1. (25) A silicon wafer was doped in a 1000°C pre-deposition diffusion with phosphorus (P) to its solid solubility limit (maximum doping concentration, at 1000°C, Nsol = 11021/cm3 for P in Si). The process time was 20 minutes. After the pre-deposition, the surface of the silicon wafer was sealed in a closed tube and an 1100°C drive-in process followed.

    1. 1). Find the surface concentration after pre-deposition.

    2. 2). Find the drive in time needed to obtain a junction depth of 4.0 μm. Assume a substrate

      concentration of 51016cm-3.

    3. 3). What is the surface concentration after the drive-in?

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