Question

Consider a silicon diode at T=300 K with Nd = 4 × 1016 cm?3 , Na...

Consider a silicon diode at T=300 K with Nd = 4 × 1016 cm?3 , Na = 1 × 1015 cm?3 , Dn = 25 cm2/s, Dp = 10 cm2/s, ?n = 5 × 10?7 s, ?p = 10?7 s, A = 10?3 cm2 , ni = 1.5 × 1010 cm?3 , r = 11.7. (1) Determine diffusion capacitance and junction capacitance at (a) Va = 0.4 V; (b) Va = 0.6 V. (2) At what voltage the two capacitances are equal? Hint: the solution cannot be found analytically, so you have to do it approximately, e.g. by trial and error, graphically, using matlab, etc

Science   Advanced-Physics   
0 0
Add a commentTranscribed image text
Next >

Homework Answers

Answer #1

0 0
Know the answer?
Your Answer:

Post as a guest

Your Name:

What's your source?

Earn Coins

Coins can be redeemed for fabulous gifts.

Log In

Sign Up

Not the answer you're looking for?
Ask your own homework help question
Similar Questions
Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration Nd...
Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration Nd (in cm?3) in n-side is Nd = 5×1015/cm3 and the acceptor impurity concentration Na in the p-side is Na = 715 ×1015/cm3. Given: the diode area A = 2×10?3 cm2, ni = 1010/cm3, ?n = 10?8 s and ?p = 10?7 s Determine the following when a forward bias of 0.6 V is applied to the diode: 1. What are the values (in ?m)...
Consider a Si pn diode with NA = 1018 cm−3 and ND = 1016 cm−3 ....
Consider a Si pn diode with NA = 1018 cm−3 and ND = 1016 cm−3 . Assume the device has a cross-sectional area of 2 µm2 . Calculate the forward and reverse current at +1.0 V and -1.0 V respectively. (At room temperature)
Consider a Si p-n junction at T=300K with the following parameters: Na=5x1017 cm-3 Nd=5x1017 cm-3 Dn=25...
Consider a Si p-n junction at T=300K with the following parameters: Na=5x1017 cm-3 Nd=5x1017 cm-3 Dn=25 cm2 /s Dp=10 cm2 /s τn=5x10-7 s τP=5x10-7 s Let the photocurrent density be 20 mA/cm2 . (a) Calculate the maximum power delivered to the load assuming that the fill factor is 0.8 (b) By what factor will the output power increase from (a) if the solar intensity is increase by a factor of 10 due to light concentration. Comment on your results
Consider a pn+ junction with doping NA = 1016 and ND = 1018 cm−3 at a...
Consider a pn+ junction with doping NA = 1016 and ND = 1018 cm−3 at a forward bias of 0.4 V. (a) Calculate the excess carrier distribution δn(xp) and δ(xn). Which one is largest? (b) Draw the excess carrier distribution. (c) At what voltage is the carrier injection starting to reach high level? (i.e. ∼ 10% of majority level)
Consider a silicon crystal that has been doped with 4 x 1016 cm-3 boron atoms and...
Consider a silicon crystal that has been doped with 4 x 1016 cm-3 boron atoms and 9 x 1015 cm-3 phosphorous atoms. (a) What is the overall charge of the silicon? (b) Is the material n-type or p-type? Explain. (c) What are the equilibrium electron and hole concentrations at room temperature (300K)? (d) What is the ionized donor density in the crystal? (e) What is the neutral donor density in the crystal? (f) Now assume the sample is heated to...
The electron concentration in a semiconductor is given by n = 1016((1-2x)/L) cm-3 for 0 ≤...
The electron concentration in a semiconductor is given by n = 1016((1-2x)/L) cm-3 for 0 ≤ x ≤ L, where L = 15 μm. The electron mobility and diffusion coefficient are μn = 1200cm2/V-s and Dn = 30.9cm2/s. An electric field is applied such that the total electron current density is a constant over the given range of x and is Jn = -50 A/cm2 . (a) Determine the electron diffusion current density (b) Determine the required electric field versus...
ADVERTISEMENT
Need Online Homework Help?

Get Answers For Free
Most questions answered within 1 hours.

Ask a Question
ADVERTISEMENT