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Consider Si sample at T = 300 K with a donor concentration three times the acceptor...

Consider Si sample at T = 300 K with a donor concentration three times the acceptor concentration. (a) If the probability of finding an electron at the bottom of conduction band is 10-5 calculate the electron and hole concentration. (5 points) 2 (b) Calculate the acceptor and donor concentration assuming complete ionization. (5 points) (c) Calculate the electron and hole concentration at T = 500 K. (5 points)

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