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Consider a Schottky junction diode between metal and n-Si, doped with 1016 donors cm–3. The cross-sectional...

Consider a Schottky junction diode between metal and n-Si, doped with 1016 donors cm–3. The cross-sectional area is 1.7 mm2. The work function of the metal is 4.9 eV. Assume T=300K . Determine the forward current, in mA, resulting from a forward bias of 0.3 volts. (answer format (X.XXEX)

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