A silicon sample contains 1016cm-3 of phosphorous. Later, it is doped with 2*1017cm-3 of boron. At this time, both phosphorous and boron atoms coexist in the silicon sample. Suppose Ni = 1.5*1010cm-3, T = 300K, and Eg = 1.1eV.
(1) What type of semiconductor is this silicon sample before the boron doping? Why?
(2) Calculate Ne and Nh before the boron doping;
(3) Determine the difference between the extrinsic and intrinsic Fermi levels before the boron doping;
(4) What type of semiconductor is this silicon sample after the boron doping? Why?
(5) Calculate Ne and Nh after the boron doping;
(6) Determine the difference between the extrinsic and intrinsic Fermi levels after the boron doping;
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