Question

What is the threshold voltage in millivolts for an NMOS FET with a source-to-body voltage, Vsb, of 887mV ? Assume that this MOSFET has a uniform body doping profile, with a P-type body doped with boron at a concentration of 2.0 x 10^17/cm^3. Also assume that this FET has an effective oxide thickness, Toxe, of 62 angstroms, and that it’s threshold voltage with Vsb = 0V is Vt0 = 411mV. Use: kT/q = 26mV and ni = 1.5 x 10^10/cm^3 at 300°K, ?s = 11.7, ?ox = 3.9, ?0 = 8.854 x 10^-14 F/cm, and q = 1.6 x 10^-19 C. The correct answer is 594.

Answer 1