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A Si sample with ND=1x10^17 cm^-3 has a steady state excess hole concentration maintained at x=0...

A Si sample with ND=1x10^17 cm^-3 has a steady state excess hole concentration maintained at x=0 of 1x10^16 cm^–3. Assume the electric field is zero, ni=1.5x10^10 cm^–3, μn=800 cm^2 /Vs, μp =200cm^2 /Vs, τ n = τ p =10μs, T=300K.

A) Plot the hole concentration as a function of distance x into the material, for x=0 to 3 x Lp

B) What is the quasi-fermi level separation at x=50μm?

C) Calculate and plot the diffusion current density as a function of x from x=0 to 3 x Lp.

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