Calculate the threshold voltage of non-ideal Si MOS capacitor with ND=4x10^16/cm3 , d=6 nm and Qf/q=5 x 10^11/cm-2 . Neglect Qit, Qot and Qm. Gate material is p+ polysilicon with Fermi level coincident with the valence band edge. Electron affinity for silicon is 4.05 eV. Show the band diagram for Φms calculation. Neglect band bending at the SiO2/Si interface for Φms calculation.
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