Question

Sketch the equilibrium band structure of a P+N junction and, in
point form, explain why this structure

predicts the rectification characteristic associated with
diodes.

Answer #1

Suppose that a p-n junction at equilibrium is short circuted
with metallic wire. Could the contact potential of the junction
drive an electric current in the circuit? Explain. Draw appropriate
energy-band diagram for the whole circuit. (I really need the
drawing, thanks)

With reference to the band structure of materials, use point
form and a diagram to explain the differences
between metallic and non-metallic conductors (i.e. in terms of the
distribution of energy states).

(4) Which of the following cannot form a near-ohmic contact?
( )
(A) p-n junction
(B) n-n+ junction
(C) p-p+ junction
(D) Semiconductor-metal junction

1. with the aid of a diagram explain how P-N junction
is formed
2. Explain what carrier mobility is and elaborate on the factors
that influence carrier mobility

An abrupt silicon p-n junction has NA = 1.6 x 1014 cm-3 on one
side and ND = 5.5 x 1015 cm-3 on the other. At a
temperature of 300K
a) (4) Find the position of the Fermi levels in both the p and
n regions
b) (4) Find the majority concentrations in each region
c) (8) Find the minority concentrations in each region (two
ways)
d) (4) Draw and label the equilibrium band diagram
e) (4) Determine the size...

1) For an abrupt p-n junction in thermal equilibrium: a) Plot a
graph showing the variation of the contact potential as a function
of doping. b) Plot a graph showing the variation of the contact
potential as a function of temperature. c)Plot a graph showing the
variation of the electric potential as a function of doping. d)Plot
of a graph showing the variation of the electric field as a
function of doping.

Sketch the spectrum of an AM signal with
modulation index 0.5, and explain why this form of modulation is
also referred to as DSB-LC.
13. Envelope detectors are commonly used to demodulate
AM signals. Explain whether this is a form of coherent or
non-coherent demodulation? Where else can envelope detectors be
used in communication syste

)a) Plot and explain the channel formation of p-channel MOS-FET
and n-channel MOS-FET for linear and saturation pinch-off regimes
(Kitabı referans alınız). Show semiconductor structure, gate,
drain, source and voltage polarities. b) Explain what happens if
you apply voltages like i.Vg >>0, Vd>>0, Vs=0; ii. Vg
>>0, Vd>0,Vs=0, iii. Vg >0, Vd <0, Vs=0 to ideal
n-channel MOS-FET structure (g:gate, s:source, d:drain). Explain
clearly by referring to MOSFET structure (burada kanal ile
ilişkilendirin ve çizimlerinizde akım gerilim grafiğinin neresini
çizdiğinizi...

A light-emitting diode (LED) is a semiconductor device (p-n
junction diode) that emits light when an electric current is passed
through it. LEDs are becoming the most popular light sources
because they are much more energy efficient than conventional
incandescent light sources. While the "white" light produced by a
light bulb or the sun is a blend of many different colors, and
these sources typically produce a large amount of heat, LEDs
release only one particular color of light, and...

(1 point) A Bernoulli differential equation is one of the
form
dydx+P(x)y=Q(x)yn (∗)
Observe that, if n=0 or 1, the Bernoulli equation is linear. For
other values of n, the substitution u=y1−n transforms the Bernoulli
equation into the linear equation
dudx+(1−n)P(x)u=(1−n)Q(x).dudx+(1−n)P(x)u=(1−n)Q(x).
Consider the initial value problem
y′=−y(1+9xy3), y(0)=−3.
(a) This differential equation can be written in the form (∗)
with
P(x)= ,
Q(x)= , and
n=.
(b) The substitution u= will transform it into the linear
equation
dudx+ u= .
(c) Using...

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