Question

Sketch the equilibrium band structure of a P+N junction and, in
point form, explain why this structure

predicts the rectification characteristic associated with
diodes.

Answer #1

10. Sketch a silicon p-n junction, showing the depletion region,
band bending, and the Fermi level in the absence of light or
applied potential. In the dark, the p-n junction acts as a
rectifier. (a) Which way do electrons and holes flow most easily in
the dark? (b) Does the built in electric field increase or decrease
under forward bias? (c) In the light, the junction acts as a
photodiode. In this case, under short circuit conditions, do
electrons flow...

Suppose that a p-n junction at equilibrium is short circuted
with metallic wire. Could the contact potential of the junction
drive an electric current in the circuit? Explain. Draw appropriate
energy-band diagram for the whole circuit. (I really need the
drawing, thanks)

With reference to the band structure of materials, use point
form and a diagram to explain the differences
between metallic and non-metallic conductors (i.e. in terms of the
distribution of energy states).

Explain the terms n-type silicon, p-type silicon, and p-n
junction. Are p- and n-type semiconductors electrically neutral?
Sketch the charge distribution in a p-n junction.

What is a p - n junction in equilibrium? Describe the
characteristics of a p-n join with forward bias and reverse
bias.

(4) Which of the following cannot form a near-ohmic contact?
( )
(A) p-n junction
(B) n-n+ junction
(C) p-p+ junction
(D) Semiconductor-metal junction

1. with the aid of a diagram explain how P-N junction
is formed
2. Explain what carrier mobility is and elaborate on the factors
that influence carrier mobility

1) For an abrupt p-n junction in thermal equilibrium: a) Plot a
graph showing the variation of the contact potential as a function
of doping. b) Plot a graph showing the variation of the contact
potential as a function of temperature. c)Plot a graph showing the
variation of the electric potential as a function of doping. d)Plot
of a graph showing the variation of the electric field as a
function of doping.

An abrupt silicon p-n junction has NA = 1.6 x 1014 cm-3 on one
side and ND = 5.5 x 1015 cm-3 on the other. At a
temperature of 300K
a) (4) Find the position of the Fermi levels in both the p and
n regions
b) (4) Find the majority concentrations in each region
c) (8) Find the minority concentrations in each region (two
ways)
d) (4) Draw and label the equilibrium band diagram
e) (4) Determine the size...

Explain what is Band structure and and why energy
bands are formed in a solid state? Support your answer with Pauli
principle (formulate the principle according to symmetrical and
antisymetrical wave function terms) and please use necessary
drawings to better explanation?

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