Question

1) Your objective is to select an implant for putting phosphorus into silicon. The peak of the implant profile should occur at 0.2 ?m below the surface. The phosphorus concentration at the peak should be 2x10¹⁷cm^-3.

a)What implant energy should be used?

b)What implant dose should be used?

2)A layer of boron is implanted completely below the surface of an n-type silicon (N_D=10¹⁵ cm^-3). Assuming the layer has a peak concentration of 1x10¹⁹ cm^-3, and the range and straggle are 0.52 ?m and 95nm respectively,

What is the dose of this implantation?

What is the energy used for this ion implantation?

At what depths are the pn junctions located?

Answer 1