)a) Plot and explain the channel formation of p-channel MOS-FET and n-channel MOS-FET for linear and saturation pinch-off regimes (Kitabı referans alınız). Show semiconductor structure, gate, drain, source and voltage polarities. b) Explain what happens if you apply voltages like i.Vg >>0, Vd>>0, Vs=0; ii. Vg >>0, Vd>0,Vs=0, iii. Vg >0, Vd <0, Vs=0 to ideal n-channel MOS-FET structure (g:gate, s:source, d:drain). Explain clearly by referring to MOSFET structure (burada kanal ile ilişkilendirin ve çizimlerinizde akım gerilim grafiğinin neresini çizdiğinizi gösterin, akım yönlerini gösteriniz). c) Plot the band diagram, approximate distributions of charge in the ideal p-channel MOS capacitor in inversion and accumulation.
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