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An abrupt P+N diode has a p-side doping of 3.23*10^18/cc, and an n-side doping of 7.24*10^16/cc,...

An abrupt P+N diode has a p-side doping of 3.23*10^18/cc, and an n-side doping of 7.24*10^16/cc, a characteristic diode current of 75 pA, and an electron minority carrier lifetime of 34 microseconds. What applied voltage would create a diffusion capacitance of 419 pFd at low frequencies?

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