Question

Consider a CMOS inverter made using the same NMOS and PMOS transistors.

KP=300uA/V^2 for NMOS, and KP=150uA/V^2 for PMOS.

W/L=2/1 VTO=0.5V for NMOS, and W/L=4 VTO=-0.5V for PMOS.

VDD=3V.

1. sketch NMOS IDS as a function of Vout and PMOS ISD as a function of Vout for Vin=1V and Vin = 2V respectively, by hand calculation.
2. label the numerical values of the critical points defining each curve, and mark the point at which NMOS IDS = PMOS ISD.

Answer 1