Question

Please solve the following using the MATHCAD application and show the solution.

A 3C-SiC material was doped with 8x1016 acceptor atoms/cm3:

(a) Find (i) the majority and minority carrier concentrations and (ii) the ionization energy for the acceptor.

(b) If 8x1016 donor atoms/cm3 was added to the original doping, (i) what is the electron and hole concentration and (ii) what is the location of EF?

Answer 1

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