Question

1. with the aid of a diagram explain how P-N junction is formed 2. Explain what...

1. with the aid of a diagram explain how P-N junction is formed
2. Explain what carrier mobility is and elaborate on the factors that influence carrier mobility

Homework Answers

Know the answer?
Your Answer:

Post as a guest

Your Name:

What's your source?

Earn Coins

Coins can be redeemed for fabulous gifts.

Not the answer you're looking for?
Ask your own homework help question
Similar Questions
Suppose that a p-n junction at equilibrium is short circuted with metallic wire. Could the contact...
Suppose that a p-n junction at equilibrium is short circuted with metallic wire. Could the contact potential of the junction drive an electric current in the circuit? Explain. Draw appropriate energy-band diagram for the whole circuit. (I really need the drawing, thanks)
What are the possible temperature effects on the forward and reverse-bias currents in a p-n junction?...
What are the possible temperature effects on the forward and reverse-bias currents in a p-n junction? Explain clearly.
Sketch the equilibrium band structure of a P+N junction and, in point form, explain why this...
Sketch the equilibrium band structure of a P+N junction and, in point form, explain why this structure predicts the rectification characteristic associated with diodes.
Imagine a solar cell where the p-n junction diode is kept in the sun. Upon absorbing...
Imagine a solar cell where the p-n junction diode is kept in the sun. Upon absorbing su light, electron hole pairs are generated inside the depletion region around the junction. You have a Silicon p-n junction diode where the Fermi energy on the p-doped side is 0.02 ev above the upper edge of the valence band and the Fermi energy is 0.01 eV below the lower edge of the conduction band in the n-doped side. The band gap in Silicon...
In a p+-n junction at room temperature, the n-doping ND is doubled. How do the following...
In a p+-n junction at room temperature, the n-doping ND is doubled. How do the following two parameters change if everything else is unchanged? Break down Voltage Built-in Voltage
2. Schottky junction: a. Consider a Schottky junction diode between Au and n-Si doped with 10^16...
2. Schottky junction: a. Consider a Schottky junction diode between Au and n-Si doped with 10^16 donors per cubic centimeter. Given the work function of Au at 5.1 eV and the electron affinity of Si is 4.05 eV. What is the theoretical barrier height for electrons from the metal to the semiconductor, and what is the built-in voltage? b. Draw the equilibrium band diagram of a Al/p-Si Schottky contact. Given the work function of Al at 5.3 eV, what is...
With the aid of an appropriate diagram, explain how a central bank keeps its exchange rate...
With the aid of an appropriate diagram, explain how a central bank keeps its exchange rate fixed at E0 under a fixed exchange rate regime when output increases.
Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration Nd...
Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration Nd (in cm?3) in n-side is Nd = 5×1015/cm3 and the acceptor impurity concentration Na in the p-side is Na = 715 ×1015/cm3. Given: the diode area A = 2×10?3 cm2, ni = 1010/cm3, ?n = 10?8 s and ?p = 10?7 s Determine the following when a forward bias of 0.6 V is applied to the diode: 1. What are the values (in ?m)...
With the aid of appropriate diagram(s), explain how the Golden Rule level of capital is decided...
With the aid of appropriate diagram(s), explain how the Golden Rule level of capital is decided without population growth and technological progress and what could do to reach the Golden Rule level if the initial steady state is higher than the Golden Rule level? What will happen to the real income, consumption and investment?
1. n- and p-type Si samples are doped with the same concentration levels of ND =...
1. n- and p-type Si samples are doped with the same concentration levels of ND = NA = 10^17 cm^-3 of their respective dopants.Compute the charge carrier concentrations in units cm^-3 and specic conductivity in siemens/cm for each of the two materials. 2. Characterize the p-n junction created from the materials of the above problem by computing the built-in voltage Vbi (in V) and depletion zone width (in nm).