Question

1. with the aid of a diagram explain how P-N junction
is formed

2. Explain what carrier mobility is and elaborate on the factors
that influence carrier mobility

Answer #1

Suppose that a p-n junction at equilibrium is short circuted
with metallic wire. Could the contact potential of the junction
drive an electric current in the circuit? Explain. Draw appropriate
energy-band diagram for the whole circuit. (I really need the
drawing, thanks)

What are the possible temperature effects on the
forward and reverse-bias currents in a p-n junction? Explain
clearly.

Sketch the equilibrium band structure of a P+N junction and, in
point form, explain why this structure
predicts the rectification characteristic associated with
diodes.

Imagine a solar cell where the p-n junction diode is kept in
the sun. Upon absorbing su light, electron hole pairs are generated
inside the depletion region around the junction.
You have a Silicon p-n junction diode where the Fermi energy
on the p-doped side is 0.02 ev above the upper edge of the valence
band and the Fermi energy is 0.01 eV below the lower edge of the
conduction band in the n-doped side. The band gap in Silicon...

In a p+-n junction at room temperature, the n-doping
ND is doubled. How do the following two parameters
change if everything else is unchanged?
Break down Voltage
Built-in Voltage

2. Schottky junction:
a. Consider a Schottky junction diode between Au and n-Si doped
with 10^16 donors per cubic centimeter. Given the work function of
Au at 5.1 eV and the electron affinity of Si is 4.05 eV. What is
the theoretical barrier height for electrons from the metal to the
semiconductor, and what is the built-in voltage?
b. Draw the equilibrium band diagram of a Al/p-Si Schottky
contact. Given the work function of Al at 5.3 eV, what is...

With the aid of an appropriate diagram, explain how a
central bank keeps its exchange rate
fixed at E0 under a fixed exchange rate regime when output
increases.

Design an ideal abrupt silicon PN-junction at 300 K such that
the donor impurity concentration Nd (in
cm?3) in n-side is Nd =
5×1015/cm3 and the acceptor impurity
concentration Na in the p-side is Na = 715
×1015/cm3.
Given: the diode area A = 2×10?3 cm2,
ni = 1010/cm3, ?n =
10?8 s and ?p = 10?7 s
Determine the following when a forward bias of 0.6 V is applied
to the diode:
1. What are the values (in ?m)...

With the aid of appropriate diagram(s), explain how the Golden
Rule level of capital is decided without population growth and
technological progress and what could do to reach the Golden Rule
level if the initial steady state is higher than the Golden Rule
level? What will happen to the real income, consumption and
investment?

1. n- and p-type Si samples are doped with the same
concentration levels of ND = NA = 10^17 cm^-3 of their respective
dopants.Compute the charge carrier concentrations in units cm^-3
and specic conductivity in siemens/cm for each of the two
materials.
2. Characterize the p-n junction created from the materials of
the above problem by computing the built-in voltage Vbi (in V) and
depletion zone width (in nm).

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