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An ideal MOS capacitor is made in n-type substrate (ND=5 x10^16cm-3 ). C-V measurement is done...

An ideal MOS capacitor is made in n-type substrate (ND=5 x10^16cm-3 ). C-V measurement is done at 1 MHz frequency.

a) Plot C-V curve for the MOS with the plot normalized by Co. (Co was measured to be 7.0 x 10^-7 F/cm2 )

b) Indicate in the plot: approximate voltage ranges and points for accumulation, flat band, depletion, threshold, and strong inversion.

c) Find the value of Cmin, and mark it in the C-V plot

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