Question

Consider a PN diode with NA = 5 x 10^17 cm-3, ND = 10^20 cm-3 (a)...

Consider a PN diode with NA = 5 x 10^17 cm-3, ND = 10^20 cm-3

(a) Find the built in potential at equilibrium.

(b) Calculate the depletion region width on the P-side and the N-side.

(c) Where is the highest electric field in this structure? What is the value of the peak electric field?

(d) Draw the (i) charge profile, (ii) electric field profile, (iii) potential profile and (iv) energy band diagram of this structure.

Homework Answers

Know the answer?
Your Answer:

Post as a guest

Your Name:

What's your source?

Earn Coins

Coins can be redeemed for fabulous gifts.

Not the answer you're looking for?
Ask your own homework help question
Similar Questions
Consider a Si pn diode with NA = 1018 cm−3 and ND = 1016 cm−3 ....
Consider a Si pn diode with NA = 1018 cm−3 and ND = 1016 cm−3 . Assume the device has a cross-sectional area of 2 µm2 . Calculate the forward and reverse current at +1.0 V and -1.0 V respectively. (At room temperature)
Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration Nd...
Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration Nd (in cm?3) in n-side is Nd = 5×1015/cm3 and the acceptor impurity concentration Na in the p-side is Na = 715 ×1015/cm3. Given: the diode area A = 2×10?3 cm2, ni = 1010/cm3, ?n = 10?8 s and ?p = 10?7 s Determine the following when a forward bias of 0.6 V is applied to the diode: 1. What are the values (in ?m)...
Consider a pn+ junction with doping NA = 1016 and ND = 1018 cm−3 at a...
Consider a pn+ junction with doping NA = 1016 and ND = 1018 cm−3 at a forward bias of 0.4 V. (a) Calculate the excess carrier distribution δn(xp) and δ(xn). Which one is largest? (b) Draw the excess carrier distribution. (c) At what voltage is the carrier injection starting to reach high level? (i.e. ∼ 10% of majority level)
A junction employs ND = 5 x 10x10^17 cm-3 and NA = 4 x 10x10^16 cm-3....
A junction employs ND = 5 x 10x10^17 cm-3 and NA = 4 x 10x10^16 cm-3. (a) Determine the majority and minority carrier concentrations on both sides. (b) Calculate the built-in potential at T=250 K, 300 K, and 350 K. Explain the trend Please show steps.
Consider a silicon diode at T=300 K with Nd = 4 × 1016 cm?3 , Na...
Consider a silicon diode at T=300 K with Nd = 4 × 1016 cm?3 , Na = 1 × 1015 cm?3 , Dn = 25 cm2/s, Dp = 10 cm2/s, ?n = 5 × 10?7 s, ?p = 10?7 s, A = 10?3 cm2 , ni = 1.5 × 1010 cm?3 , r = 11.7. (1) Determine diffusion capacitance and junction capacitance at (a) Va = 0.4 V; (b) Va = 0.6 V. (2) At what voltage the two capacitances...
An abrupt silicon p-n junction has NA = 1.6 x 1014 cm-3 on one side and...
An abrupt silicon p-n junction has NA = 1.6 x 1014 cm-3 on one side and ND = 5.5 x 1015 cm-3 on the other. At a temperature of 300K a) (4) Find the position of the Fermi levels in both the p and n regions b) (4) Find the majority concentrations in each region c) (8) Find the minority concentrations in each region (two ways) d) (4) Draw and label the equilibrium band diagram e) (4) Determine the size...
A Si sample with ND=1x10^17 cm^-3 has a steady state excess hole concentration maintained at x=0...
A Si sample with ND=1x10^17 cm^-3 has a steady state excess hole concentration maintained at x=0 of 1x10^16 cm^–3. Assume the electric field is zero, ni=1.5x10^10 cm^–3, μn=800 cm^2 /Vs, μp =200cm^2 /Vs, τ n = τ p =10μs, T=300K. A) Plot the hole concentration as a function of distance x into the material, for x=0 to 3 x Lp B) What is the quasi-fermi level separation at x=50μm? C) Calculate and plot the diffusion current density as a function...
ADVERTISEMENT
Need Online Homework Help?

Get Answers For Free
Most questions answered within 1 hours.

Ask a Question
ADVERTISEMENT