Consider a silicon crystal that has been doped with 4 x 1016 cm-3 boron atoms and 9 x 1015 cm-3 phosphorous atoms. (a) What is the overall charge of the silicon? (b) Is the material n-type or p-type? Explain. (c) What are the equilibrium electron and hole concentrations at room temperature (300K)? (d) What is the ionized donor density in the crystal? (e) What is the neutral donor density in the crystal? (f) Now assume the sample is heated to 600K. Recalculate the electron and hole concentrations. Comment on the change in majority carriers and minority carriers due to the increase in temperature.
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