Calculate the resistance of a pure silicon wire, 3 cm long, and with a cross sectional area of 2 mm x 2 mm, at room temperature. Repeat for a sample of silicon with the same geometry but doped with arsenic to a concentration of 10^18 cm^3. Assume that the carrier mobilities are 1500 cm2/Vs and 450 cm2/Vs for electrons and holes, respectively.
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