Question

The hole concentration of silicon is p (x) = (10 ^ 16) * exp (-(x /...

The hole concentration of silicon is p (x) = (10 ^ 16) * exp (-(x / Lp) * 16) and Lp = 2 * 10 ^ -4cm. Assuming the hole diffusion coefficient is Dp = 8cm ^ 2 / sec, calculate the hole diffusion current density at the following location. (a) x = 0, (b) x = 2 * 10 ^ -4 cm (c) x = 10 ^ -3 cm

Homework Answers

Know the answer?
Your Answer:

Post as a guest

Your Name:

What's your source?

Earn Coins

Coins can be redeemed for fabulous gifts.

Not the answer you're looking for?
Ask your own homework help question
Similar Questions
A Si sample with ND=1x10^17 cm^-3 has a steady state excess hole concentration maintained at x=0...
A Si sample with ND=1x10^17 cm^-3 has a steady state excess hole concentration maintained at x=0 of 1x10^16 cm^–3. Assume the electric field is zero, ni=1.5x10^10 cm^–3, μn=800 cm^2 /Vs, μp =200cm^2 /Vs, τ n = τ p =10μs, T=300K. A) Plot the hole concentration as a function of distance x into the material, for x=0 to 3 x Lp B) What is the quasi-fermi level separation at x=50μm? C) Calculate and plot the diffusion current density as a function...
.         Consider a silicon sample at 300 K. Assume that the electron concentration varies linearly with...
.         Consider a silicon sample at 300 K. Assume that the electron concentration varies linearly with distance. At x=0, the electron concentration is n(0). At x=10 µm, the electron concentration is n(10µm)= 5x1014/cm3. If the electron diffusion coefficient, assumed constant, is Dn =30 cm2/sec, determine the electron concentration at x=0 for the following two diffusion current densities: (a) the diffusion current density is found to be Jndiff = + 0.9 A/cm2 and (b) Jndiff = - 0.9 A/cm2.
Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration Nd...
Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration Nd (in cm?3) in n-side is Nd = 5×1015/cm3 and the acceptor impurity concentration Na in the p-side is Na = 715 ×1015/cm3. Given: the diode area A = 2×10?3 cm2, ni = 1010/cm3, ?n = 10?8 s and ?p = 10?7 s Determine the following when a forward bias of 0.6 V is applied to the diode: 1. What are the values (in ?m)...
2. b) An n-type silicon wafer undergoes a pre-deposition diffusion process with a constant surface concentration...
2. b) An n-type silicon wafer undergoes a pre-deposition diffusion process with a constant surface concentration of boride gas; the resulting concentration of boron in silicon at the surface is estimated to be 1x1018 atoms cm-3. The background concentration of trace boron atoms in the silicon wafer is estimated to be 1x1014 cm-3. Estimate the depth of the p-n junction below the surface when the background doping concentration of the n-type impurity is 3.45 x1016 cm-3; assume the diffusion process...
For silicon at T=300K, Intrinsic carrier concentration (??) = 1.45 × 10^10 ??−3 Silicon bandgap (??...
For silicon at T=300K, Intrinsic carrier concentration (??) = 1.45 × 10^10 ??−3 Silicon bandgap (?? = 1.12 ??) The silicon is doped at room temperature (300K) with Arsenic atoms (penta-valent), so that donor concentration is (??) =6× 10^16 cm-3 . Find the equilibrium concentration of electrons, holes and shift of the chemical potential (Fermi level) with respect to intrinsic chemical potential due to doping.
#2 At one instantaneous moment, the electron concentration in n-type silicon at 300 K varies linearly...
#2 At one instantaneous moment, the electron concentration in n-type silicon at 300 K varies linearly from 1e17 cm-3 at x = 0 to 6e16 cm-3 at x = 2 µm. Calculate the electron current density in the silicon sample at that moment. Assume µn= 1000 cm2/V/s. #3 Explain why the assumed mobility in question #2, above, is valid and reasonable.  NOTE: I just need to know the 2nd part of the question that why 'mu' = 1000 is valid and...
Consider a silicon crystal that has been doped with 4 x 1016 cm-3 boron atoms and...
Consider a silicon crystal that has been doped with 4 x 1016 cm-3 boron atoms and 9 x 1015 cm-3 phosphorous atoms. (a) What is the overall charge of the silicon? (b) Is the material n-type or p-type? Explain. (c) What are the equilibrium electron and hole concentrations at room temperature (300K)? (d) What is the ionized donor density in the crystal? (e) What is the neutral donor density in the crystal? (f) Now assume the sample is heated to...
An implantation process on a p-type Silicon wafer (Nb=1e16/cm3) covered with 100nm oxide (SiO2) layer uses...
An implantation process on a p-type Silicon wafer (Nb=1e16/cm3) covered with 100nm oxide (SiO2) layer uses 90 keV Phosphorus ions to result in a peak concentration of 2·1019 cm-3. The implanted ions are subsequently diffused in air for 2 hours at 1100 °C. Find the depth of the p-well after this diffusion cycle. State any assumptions that you made. (D = 2·10-13 cm2/sec for B @1100°C)
The electron concentration in a semiconductor is given by n = 1016((1-2x)/L) cm-3 for 0 ≤...
The electron concentration in a semiconductor is given by n = 1016((1-2x)/L) cm-3 for 0 ≤ x ≤ L, where L = 15 μm. The electron mobility and diffusion coefficient are μn = 1200cm2/V-s and Dn = 30.9cm2/s. An electric field is applied such that the total electron current density is a constant over the given range of x and is Jn = -50 A/cm2 . (a) Determine the electron diffusion current density (b) Determine the required electric field versus...
Consider a silicon diode at T=300 K with Nd = 4 × 1016 cm?3 , Na...
Consider a silicon diode at T=300 K with Nd = 4 × 1016 cm?3 , Na = 1 × 1015 cm?3 , Dn = 25 cm2/s, Dp = 10 cm2/s, ?n = 5 × 10?7 s, ?p = 10?7 s, A = 10?3 cm2 , ni = 1.5 × 1010 cm?3 , r = 11.7. (1) Determine diffusion capacitance and junction capacitance at (a) Va = 0.4 V; (b) Va = 0.6 V. (2) At what voltage the two capacitances...
ADVERTISEMENT
Need Online Homework Help?

Get Answers For Free
Most questions answered within 1 hours.

Ask a Question
ADVERTISEMENT