The hole concentration of silicon is p (x) = (10 ^ 16) * exp (-(x / Lp) * 16) and Lp = 2 * 10 ^ -4cm. Assuming the hole diffusion coefficient is Dp = 8cm ^ 2 / sec, calculate the hole diffusion current density at the following location. (a) x = 0, (b) x = 2 * 10 ^ -4 cm (c) x = 10 ^ -3 cm
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