Q3. Suppose a silicon wafer 0.1 cm thick, which originally contains one phosphorus atom for every 5 million Si atoms, is treated so that there are 200 phosphorous (P) atoms for every 5 million Si atoms at the surface. Calculate the concentration gradient (a) in atomic percent/ cm and (b) in atoms/ cm'.cm. The lattice parameter of silicon is 5.4307Å
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