Question

An n-type silicon (Si) is produced by doping with phosphorus (P). The electrical conductivity measurement of...

An n-type silicon (Si) is produced by doping with phosphorus (P). The electrical conductivity measurement of the doped Si shows the charge-carrier concentration to be 3.091 x 1017 cm-3 at room temperature. Calculate the doping level of P and express your answer in units of gram of P per kilogram of Si.

I saw some explanation for this question answered on here but I still don't understand it. Thanks!

Engineering   Civil-Engineering   
0 0
Add a commentTranscribed image text
Next >

Homework Answers

Answer #1

Hope this answer help you

0 0
Know the answer?
Your Answer:

Post as a guest

Your Name:

What's your source?

Earn Coins

Coins can be redeemed for fabulous gifts.

Log In

Sign Up

Not the answer you're looking for?
Ask your own homework help question
Similar Questions
The p-type region of a silicon p-n junction is doped with 1016 boron atoms per cubic...
The p-type region of a silicon p-n junction is doped with 1016 boron atoms per cubic centimeter, and the n-type region is doped with 1018 phosphorus atoms per cubic centimeter. Assume a step p-n junction and that all doping atoms are ionized. The intrinsic carrier concentration in silicon at 300K is 1.5∗1010cm−3 . What are the electron and hole concentrations (in cm−3 ) in the p-type and n-type regions at thermal equilibrium? Hole concentration in p-type region (in 1016cm−3 )...
Solid state chemistry: n doping and p doping Classify the following as n- or p-doped semi...
Solid state chemistry: n doping and p doping Classify the following as n- or p-doped semi conductors: (A) Ga doped Ge (B) As doped Si (C) In0.40 As0.60 The answer for A is p-doped. The answer for B is n-doped. and the answer for C is p-doped. I don't really understand why, is there a period table trend that can help determine this? I would think that Ga doped Ge would be n-doped since Ge has more valence electrons than...
(25) A silicon wafer was doped in a 1000°C pre-deposition diffusion with phosphorus (P) to its...
(25) A silicon wafer was doped in a 1000°C pre-deposition diffusion with phosphorus (P) to its solid solubility limit (maximum doping concentration, at 1000°C, Nsol = 11021/cm3 for P in Si). The process time was 20 minutes. After the pre-deposition, the surface of the silicon wafer was sealed in a closed tube and an 1100°C drive-in process followed. 1). Find the surface concentration after pre-deposition. 2). Find the drive in time needed to obtain a junction depth of 4.0 μm....
1. n- and p-type Si samples are doped with the same concentration levels of ND =...
1. n- and p-type Si samples are doped with the same concentration levels of ND = NA = 10^17 cm^-3 of their respective dopants.Compute the charge carrier concentrations in units cm^-3 and specic conductivity in siemens/cm for each of the two materials. 2. Characterize the p-n junction created from the materials of the above problem by computing the built-in voltage Vbi (in V) and depletion zone width (in nm).
ADVERTISEMENT
Need Online Homework Help?

Get Answers For Free
Most questions answered within 1 hours.

Ask a Question
ADVERTISEMENT