Question

An n-type silicon (Si) is produced by doping with phosphorus (P). The electrical conductivity measurement of the doped Si shows the charge-carrier concentration to be 3.091 x 1017 cm-3 at room temperature. Calculate the doping level of P and express your answer in units of gram of P per kilogram of Si.

I saw some explanation for this question answered on here but I still don't understand it. Thanks!

Answer #1

Hope this answer help you

The p-type region of a silicon p-n junction is doped with 1016
boron atoms per cubic centimeter, and the n-type region is doped
with 1018 phosphorus atoms per cubic centimeter. Assume a step p-n
junction and that all doping atoms are ionized. The intrinsic
carrier concentration in silicon at 300K is 1.5∗1010cm−3 . What are
the electron and hole concentrations (in cm−3 ) in the p-type and
n-type regions at thermal equilibrium? Hole concentration in p-type
region (in 1016cm−3 )...

Solid state chemistry: n doping and p doping
Classify the following as n- or p-doped semi conductors:
(A) Ga doped Ge
(B) As doped Si
(C) In0.40 As0.60
The answer for A is p-doped. The answer for B is n-doped. and
the answer for C is p-doped.
I don't really understand why, is there a period table trend that
can help determine this? I would think that Ga doped Ge would be
n-doped since Ge has more valence electrons than...

(25) A silicon wafer was doped in a 1000°C pre-deposition
diffusion with phosphorus (P) to its solid solubility limit
(maximum doping concentration, at 1000°C, Nsol = 11021/cm3 for P
in Si). The process time was 20 minutes. After the pre-deposition,
the surface of the silicon wafer was sealed in a closed tube and an
1100°C drive-in process followed.
1). Find the surface concentration after pre-deposition.
2). Find the drive in time needed to obtain a junction depth of
4.0 μm....

1. n- and p-type Si samples are doped with the same
concentration levels of ND = NA = 10^17 cm^-3 of their respective
dopants.Compute the charge carrier concentrations in units cm^-3
and specic conductivity in siemens/cm for each of the two
materials.
2. Characterize the p-n junction created from the materials of
the above problem by computing the built-in voltage Vbi (in V) and
depletion zone width (in nm).

ADVERTISEMENT

Get Answers For Free

Most questions answered within 1 hours.

ADVERTISEMENT

asked 1 minute ago

asked 28 minutes ago

asked 30 minutes ago

asked 44 minutes ago

asked 1 hour ago

asked 1 hour ago

asked 1 hour ago

asked 1 hour ago

asked 1 hour ago

asked 2 hours ago

asked 2 hours ago

asked 2 hours ago