In a typical semiconducting material, we start with silicon (group IV) and introduce atoms of group V or group III depending on whether we are constructing an n- or p-type semiconductor respectively.
Types of dopants
There are two types of dopants used in doping the tetravalent Si or Ge.
1) Pentavalent (valency 5 ) atom : Arsenic(As), Antimony(Sb), Phosphorus(P).etc
2) Trivalent (valency 3 ) atom : Indium(In) , Boron(Br), Aluminium(Al).etc
N-Type Semiconducture :- doping pentavalent impurities phosphorus to germenium crystal
P- Type semiconducture : - Trivalent doping impurities.
The heavily n-type Si substrate was 500μm thick with 0.001-0.005Ω-cm resistivity.The III-V material consisted of heavily n-type (100) gallium arsenide (GaAs) substrate, 500nm n-type gallium indium phosphide (Ga0.5In0.5P) etch stop, and 25nm heavily n-type gallium indium nitride arsenide (GaInNAs) contact.
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