Question

Please, solve me these Qs quickly ..I have Exame.

-What type of carrier's confinement does it exists in the following nanostructures at room
temperature? Explain and prove your choice
Ge thin film (5nm thick)-------------------------------------------------------------------------------------------------------
Si Nanowire (30 nm diameter, 2 μm length),----------------------------------------------------------------------------
GaAs Nanowire (50 nm diameter, 2 μm length) -----------------------------------------------------------------------
InAs nanodot (50 nm diameter) -----------------------------------------------------------------------------------------

Answer 1

Ge thin film (5 nm thick) is formed when 2 dimensions of system are confined which means that carriers are confined in 2 dimensions and are free to move along one direction.So they come under quantum wire

Si Nanowire (30 nm diameter, 2μm length) , carriers are confined to 1 dimension and are free to move along the other 2 dimensions . So, they fall under quantum well.

Ga As Nanowire (50 nm diameter, 2 μm length) , same as above

In As nanodot ( 50 nm diameter) , carriers are confined to all 3 directions